Abstract
Silicon–germanium (SiGe) films have been grown using chemical vapor deposition on c-plane sapphire substrates. Optical and material characterization of the films show successful alloying of SiGe up to 22.4% Si. X-ray diffraction characterizations show that the SiGe films are oriented in the (111) direction on the sapphire (0001) substrates. However, 60°-rotated twin defects are observed as well. Transmission electron microscopy (TEM) shows crystalline growth of the film. The high surface roughness observed in the TEM images and the atomic force microscopy scans of the films indicates the formation of two different orientations of SiGe on sapphire substrates.
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Acknowledgments
The work was supported by the National Aeronautics and Space Administration Research Infras-tructure Development (NASA RID) (Grant No. 002279-00001A), National Aeronautics and Space Administration Established Program to Stimulate Competitive Research (NASA EPSCoR) (80NSSC19M0145, NNX15AN18A, NNX15AK32A: RID 17004), the National Science Foundation Established Program to Stimulate Competitive Research (NSF EPSCoR) (Grant No. OIA-1457888), and the Arkansas EPSCoR Program, ASSET III. The authors would also like to thank Drs. Mourad Benamara and Andrian Kuchuk at the Institute for Nanoscience and Engineering at the University of Arkansas for their assistance in TEM, XRD, and AFM characterization.
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Sabbar, A., Grant, J.M., Grant, P.C. et al. Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System. J. Electron. Mater. 49, 4809–4815 (2020). https://doi.org/10.1007/s11664-020-08169-9
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DOI: https://doi.org/10.1007/s11664-020-08169-9